Analysis of electronic levels in SiC: V, N, Al powders and crystals using thermally stimulated luminescence

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 102-106

  Hartung, W ^a   Rasp, M ^a   Hofmann, D ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Electronic levels; Powder synthesis; Silicon carbide; Thermally stimulated luminescence; Vanadium

Indexed keywords

ALUMINUM; CRYSTALS; ELECTRON ENERGY LEVELS; NITROGEN; PHOTOIONIZATION; PHOTOLUMINESCENCE; POWDERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; VANADIUM;

THERMALLY STIMULATED LUMINESCENCE (TSL);

SILICON CARBIDE;

EID: 0000120519     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00455-3     Document Type: Article

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