-
1
-
-
29144494433
-
New mold manufacturing techniques
-
Hall C., Tricard M., Murakoshi H., Yamamoto Y., Kuriyama K., and Yoko H. New mold manufacturing techniques. Proceedings of the SPIE 5868 (2005) 58680V
-
(2005)
Proceedings of the SPIE
, vol.5868
-
-
Hall, C.1
Tricard, M.2
Murakoshi, H.3
Yamamoto, Y.4
Kuriyama, K.5
Yoko, H.6
-
2
-
-
0037852197
-
Development of high-strength reaction-sintered silicon carbide
-
Suyama S., Kameda T., and Itoh Y. Development of high-strength reaction-sintered silicon carbide. Diamond and Related Materials 12 (2003) 1201-1204
-
(2003)
Diamond and Related Materials
, vol.12
, pp. 1201-1204
-
-
Suyama, S.1
Kameda, T.2
Itoh, Y.3
-
3
-
-
29144512259
-
Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide
-
Suyama S., Itoh Y., Tsuno K., and Ohno K. Φ650 mm optical space mirror substrate of high-strength reaction-sintered silicon carbide. Proceedings of SPIE 5868 (2005) 58680E
-
(2005)
Proceedings of SPIE
, vol.5868
-
-
Suyama, S.1
Itoh, Y.2
Tsuno, K.3
Ohno, K.4
-
5
-
-
34249289331
-
ELID grinding properties of high-strength reaction-sintered SiC
-
Dai Y., Ohmori H., Lin W., Eto H., Ebizuka N., and Tsuno K. ELID grinding properties of high-strength reaction-sintered SiC. Key Engineering Materials 291-292 (2005) 121-126
-
(2005)
Key Engineering Materials
, vol.291-292
, pp. 121-126
-
-
Dai, Y.1
Ohmori, H.2
Lin, W.3
Eto, H.4
Ebizuka, N.5
Tsuno, K.6
-
6
-
-
34547538175
-
Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components
-
Tam H.Y., Cheng H.B., and Wang Y.W. Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components. Journal of Materials Processing Technology 192-193 (2007) 276-280
-
(2007)
Journal of Materials Processing Technology
, vol.192-193
, pp. 276-280
-
-
Tam, H.Y.1
Cheng, H.B.2
Wang, Y.W.3
-
7
-
-
31444440868
-
Magnetorheological finishing of SiC aspheric mirrors
-
Cheng H., Feng Z., Lei S., and Wang Y. Magnetorheological finishing of SiC aspheric mirrors. Materials and Manufacturing Processes 20 6 (2005) 917-931
-
(2005)
Materials and Manufacturing Processes
, vol.20
, Issue.6
, pp. 917-931
-
-
Cheng, H.1
Feng, Z.2
Lei, S.3
Wang, Y.4
-
8
-
-
0035390131
-
Mechanical behavior of single crystalline and polycrystalline silicon carbides evaluated by Vickers indentation
-
Kitahara H., Noda Y., Yoshida F., Nakashima H., Shinohara N., and Abe H. Mechanical behavior of single crystalline and polycrystalline silicon carbides evaluated by Vickers indentation. Journal of the Ceramic Society of Japan 109 (2001) 602-606
-
(2001)
Journal of the Ceramic Society of Japan
, vol.109
, pp. 602-606
-
-
Kitahara, H.1
Noda, Y.2
Yoshida, F.3
Nakashima, H.4
Shinohara, N.5
Abe, H.6
-
9
-
-
0001968603
-
Diamond turning of brittle materials for optical components
-
Nakasuji T., Kodera S., Hara S., Matsunaga H., Ikawa N., and Shimada S. Diamond turning of brittle materials for optical components. Annals of the CIRP 39 (1990) 89-92
-
(1990)
Annals of the CIRP
, vol.39
, pp. 89-92
-
-
Nakasuji, T.1
Kodera, S.2
Hara, S.3
Matsunaga, H.4
Ikawa, N.5
Shimada, S.6
-
13
-
-
58149491344
-
High-efficiency machining of single-crystal germanium using large-radius diamond tools
-
Ohta T., Yan J., Yajima S., Takahashi Y., Horikawa N., and Kuriyagawa T. High-efficiency machining of single-crystal germanium using large-radius diamond tools. International Journal of Surface Science and Engineering 1 (2007) 374-392
-
(2007)
International Journal of Surface Science and Engineering
, vol.1
, pp. 374-392
-
-
Ohta, T.1
Yan, J.2
Yajima, S.3
Takahashi, Y.4
Horikawa, N.5
Kuriyagawa, T.6
-
15
-
-
33751278293
-
Single point diamond turning of CVD coated silicon carbide
-
October 8-11, Ypsilanti, Michigan, USA
-
B. Bhattacharya, J. Patten, J. Jacob, Single point diamond turning of CVD coated silicon carbide, in: Proceedings of 2006 ASME International Conference on Manufacturing Science and Engineering, October 8-11, Ypsilanti, Michigan, USA, 2006, pp. 1-6.
-
(2006)
Proceedings of 2006 ASME International Conference on Manufacturing Science and Engineering
, pp. 1-6
-
-
Bhattacharya, B.1
Patten, J.2
Jacob, J.3
-
18
-
-
37349042934
-
Investigation of mechanical and machinability properties of SiC particle reinforced Al-MMC
-
Ozben T., Kilickap E., and Caki{dotless}r O. Investigation of mechanical and machinability properties of SiC particle reinforced Al-MMC. Journal of Materials Processing Technology 198 (2008) 220-225
-
(2008)
Journal of Materials Processing Technology
, vol.198
, pp. 220-225
-
-
Ozben, T.1
Kilickap, E.2
Cakir, O.3
-
19
-
-
43849090491
-
Workpiece surface quality when ultra-precision turning of SiCp/Al composites
-
Ge Y.F., Xu J.H., Yang H., Luo S.B., and Fu Y.C. Workpiece surface quality when ultra-precision turning of SiCp/Al composites. Journal of Materials Processing Technology 203 (2008) 166-175
-
(2008)
Journal of Materials Processing Technology
, vol.203
, pp. 166-175
-
-
Ge, Y.F.1
Xu, J.H.2
Yang, H.3
Luo, S.B.4
Fu, Y.C.5
-
20
-
-
0035157059
-
On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications
-
Yan J., Yoshino M., Kuriyagawa T., Shirakashi T., Syoji K., and Komanduri R. On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications. Materials Science and Engineering A 297 (2001) 230-234
-
(2001)
Materials Science and Engineering A
, vol.297
, pp. 230-234
-
-
Yan, J.1
Yoshino, M.2
Kuriyagawa, T.3
Shirakashi, T.4
Syoji, K.5
Komanduri, R.6
-
22
-
-
1542276675
-
Laser micro-Raman spectroscopy of single-point diamond machined silicon substrates
-
Yan J. Laser micro-Raman spectroscopy of single-point diamond machined silicon substrates. Journal of Applied Physics 95 4 (2004) 2094-2101
-
(2004)
Journal of Applied Physics
, vol.95
, Issue.4
, pp. 2094-2101
-
-
Yan, J.1
-
23
-
-
43049097178
-
Nondestructive measurement of the machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy
-
Yan J., Asami T., and Kuriyagawa T. Nondestructive measurement of the machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy. Precision Engineering 32 (2008) 186-195
-
(2008)
Precision Engineering
, vol.32
, pp. 186-195
-
-
Yan, J.1
Asami, T.2
Kuriyagawa, T.3
-
24
-
-
0043065480
-
Some observations on the wear of diamond tools in ultra-precision cutting of single-crystal silicon
-
Yan J., Syoji K., and Tamaki J. Some observations on the wear of diamond tools in ultra-precision cutting of single-crystal silicon. Wear 255 (2003) 1380-1387
-
(2003)
Wear
, vol.255
, pp. 1380-1387
-
-
Yan, J.1
Syoji, K.2
Tamaki, J.3
-
25
-
-
27844516682
-
Transmission electron microscopic observation of nanoindentations made on ductile-machined silicon wafers
-
Yan J., Takahashi H., Tamaki J., Gai X., and Kuriyagawa T. Transmission electron microscopic observation of nanoindentations made on ductile-machined silicon wafers. Applied Physics Letters 87 (2005) 211901
-
(2005)
Applied Physics Letters
, vol.87
, pp. 211901
-
-
Yan, J.1
Takahashi, H.2
Tamaki, J.3
Gai, X.4
Kuriyagawa, T.5
-
26
-
-
0000739373
-
Pressure-induced phase transition in SiC
-
Yoshida M., Onodera A., Ueno M., Takemura K., and Shimomura O. Pressure-induced phase transition in SiC. Physical Review B 48 (1993) 10587-10590
-
(1993)
Physical Review B
, vol.48
, pp. 10587-10590
-
-
Yoshida, M.1
Onodera, A.2
Ueno, M.3
Takemura, K.4
Shimomura, O.5
-
28
-
-
48449104191
-
Extraction of flow properties of single-crystal silicon carbide by nanoindentation and finite-element simulation
-
Shim S., Jang J., and Pharr G.M. Extraction of flow properties of single-crystal silicon carbide by nanoindentation and finite-element simulation. Acta Materialia 56 (2008) 3824-3832
-
(2008)
Acta Materialia
, vol.56
, pp. 3824-3832
-
-
Shim, S.1
Jang, J.2
Pharr, G.M.3
-
29
-
-
33846885463
-
Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers
-
Grim J.R., Benamara M., Skowronski M., Everson W.J., and Heydemann V.D. Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers. Semiconductor Science and Technology 21 (2006) 1709-1713
-
(2006)
Semiconductor Science and Technology
, vol.21
, pp. 1709-1713
-
-
Grim, J.R.1
Benamara, M.2
Skowronski, M.3
Everson, W.J.4
Heydemann, V.D.5
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