Removal rate and surface roughness in the lapping and polishing of RB-SiC optical components

Journal of Materials Processing Technology

Volumn 192-193, Issue , 2007, Pages 276-280

  Tam, H Y ^a   Cheng, H B ^a,b   Wang, Y W ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b BEIJING INSTITUTE OF TECHNOLOGY   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Lapping; Material removal rate; Polishing; Reaction bonded silicon carbide; Surface roughness

Indexed keywords

ABRASIVES; ENGINEERS; HARDNESS; LAPPING; MICROMETERS; REMOVAL; SURFACE PROPERTIES; SURFACE ROUGHNESS; THERMAL EXPANSION; SILICON CARBIDE; SURFACES;

MATERIAL REMOVAL; OPTICAL COMPONENTS; PROCESS PARAMETERS; REMOVAL RATE;

SILICON CARBIDE; POLISHING;

FABRICATION PROCESS; LAPPING AND POLISHING; LOW THERMAL EXPANSION; MATERIAL REMOVAL RATE; OPTICAL COMPONENTS; PROCESS PARAMETERS; REACTION-BONDED SILICON CARBIDES; SURFACE PROFILERS;

EID: 34547538175     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2007.04.091     Document Type: Article

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