Proposal of novel structure light emitting devices consisting of InN/GaN MQWs with ultrathin InN wells in GaN matrix

International Journal of High Speed Electronics and Systems

Volumn 18, Issue 4, 2008, Pages 993-1003

  Yoshikawa, Akihiko ^a   Che, Song Bek ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

InN GaN MQWs; LED LD; Nanostructure; QCSE

Indexed keywords

CRYSTAL GROWTH; ELECTROLUMINESCENCE; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; WELLS;

ACTIVE LAYERS; BLUE SHIFTS; COHERENT GROWTHS; ELECTROLUMINESCENCE EMISSIONS; GAN TEMPLATES; GROWTH CONDITIONS; INJECTION CURRENTS; INN LAYERS; INN/GAN MQWS; LED/LD; MATRIXES; MULTIPLE QUANTUM WELLS; NANOSTRUCTURE; NOVEL STRUCTURES; PEAK WAVELENGTHS; QCSE; QUANTUM-CONFINED STARK EFFECTS; RADIO FREQUENCIES; ROOM TEMPERATURES; SELF ORDERINGS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 60749103247     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156408005941     Document Type: Article

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