Characteristics of Pt/Bi3.25La0.75Ti 3O12/ZrO2/Si structures using ZrO2 as buffer layers for ferroelectric-gate field-effect transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1739-1742

  Lee, Jung Mi ^a   Kim, Kyoung Tae ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER; INTERDIFFUSION; METALORGANIC DECOMPOSITION DEPOSITION (MOD); REMANENT POLARIZATION;

CAPACITANCE; CURRENT DENSITY; DECOMPOSITION; DEPOSITION; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; POLARIZATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

FIELD EFFECT TRANSISTORS;

EID: 4344618799     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1759352     Document Type: Conference Paper

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