Organic light-emitting devices with silicon anodes

Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

  Huang, C J ^a   Han, S ^a   Grozea, D ^a   Turak, A ^a   Lu, Z H ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION BARRIERS; HIGHEST OCCUPIED MOLECULAR ORBIT (HOMO); HOLE INJECTION; OZONE OXIDATION;

ANODES; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRON MOBILITY; FERMI LEVEL; SILICON; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

LIGHT EMITTING DIODES;

EID: 21444431983     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1877812     Document Type: Article

References (15)

1. I. D. Parker, J. Appl. Phys. 75, 1656 (1994).
2. I. H. Campbell, P. S. Davids, D. L. Smith, N. N. Barashkov, and J. P. Ferraris, Appl. Phys. Lett. 72, 1863 (1998).
3. S. A. Van Slyke, C. H. Chen, and C. W. Tang, Appl. Phys. Lett. 69, 2160 (1996).
4. P. K. H. Ho, J. S. Kim, J. H. Burroughes, H. Becker, S. F. Y. Li, T. M. Brown, F. Cacialli, and R. H. Friend, Nature (London) 404, 481 (2000).
5. M. Gross, D. C. Muller, H. G. Nothofer, U. Scherf, D. Neher, C. Brauchle, and K. Meerholz, Nature (London) 405, 661 (2000).
6. G. D. Wilk and B. Brar, IEEE Electron Device Lett. 20, 132 (1999).
7. S. R. Kasi, M. Liehr, P. A. Thiry, H. Dallaporta, and M. Offenberg, Appl. Phys. Lett. 59, 108 (1991).
8. Z. H. Lu, J. P. McCaffrey, B. Brar, G. D. Wilk, R. M. Wallace, L. C. Feldman, and S. P. Tay, Appl. Phys. Lett. 71, 2764 (1997).
9. F. J. Himpsel, F. R. Mcfeely, A. Talebibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 38, 6084 (1988).
10. W. Mönch, Semiconductor Surface and Interface (Springer, Berlin, 1993).
11. A. Dodabalapur, L. J. Rothberg, R. H. Jordan, T. M. Miller, R. E. Slusher, and J. M. Phillips, J. Appl. Phys. 80, 6954 (1996).
12. I. D. Parker and H. H. Kim, Appl. Phys. Lett. 64, 1774 (1994).
13. H. H. Kim, T. M. Miller, E. H. Westerwick, Y. O. Kim, E. W. Kwock, M. D. Morris, and M. Cerullo, J. Lightwave Technol. 12, 2107 (1994).
14. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1982).
15. F. Nuesch, L. J. Rothberg, E. W. Forsythe, Q. T. Le, and Y. L. Gao, Appl. Phys. Lett. 74, 880 (1999).