Magnetoresistance oscillations in double ferromagnetic tunnel junctions with layered ferromagnetic nanoparticles

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 2806-2808

  Nakajima, K ^a   Saito, Y ^a   Nakamura, S ^a   Inomata, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Double tunnel junction; Nanoparticle; Single electron tunneling effect; Tunnel magnetoresistance

Indexed keywords

ALUMINA; ELECTRIC CONDUCTANCE; ELECTRIC INSULATING MATERIALS; FERROMAGNETIC MATERIALS; NANOSTRUCTURED MATERIALS; OSCILLATIONS; TUNNEL JUNCTIONS;

MAGNETORESISTANCE OSCILLATIONS; SINGLE ELECTRON TUNNELING;

MAGNETORESISTANCE;

EID: 0034260633     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908595     Document Type: Article

References (13)

1. Magnetoresistance of Ni/NiO/Co small junctions in Coulomb blockade regime
2. Tunneling of spin-polarized electrons and magnetoresistance in granular Ni films
3. Enhanced magnetoresistance in insulating granular systems: Evidence for higher-order tunneling
4. Scanning tunneling microscopy investigation of single electron tunneling in Co-Al-O and Cu-Al-O granular films
5. Point-contact electrodes to probe charging effects in individual ultrasmall cobalt clusters
6. Tunneling via individual electronic states in ferromagnetic nanoparticles
7. Spin-dependent tunneling between a soft ferromagnetic layer and hard magnetic nanoparticles
8. Spin-dependent tunneling through layered ferromagnetic nanoparticles
9. Spin-dependent tunneling with Coulomb blockade
10. Magnetoresistance of the double-tunnel-junction Coulomb blockade with magnetic metals
11. Interplay of spin accumulation and Coulomb blockade in double ferromagnetic junctions
12. Spin accumulation in small ferromagnetic double tunnel junctions