Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction

Applied Physics Letters

Volumn 83, Issue 5, 2003, Pages 948-950

  Colis, S ^a,b   Gieres, G ^a   Bar L ^a   Wecker, J ^a  

^a SIEMENS AG   (Germany)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; MAGNETORESISTANCE; MAGNETRON SPUTTERING; PHOTOLITHOGRAPHY;

MAGNETIC LAYERS;

TUNNEL JUNCTIONS;

EID: 0042879430     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1597964     Document Type: Article

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