Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Wang, M J ^a   Yuan, L ^a   Cheng, C C ^b   Beling, C D ^b   Chen, K J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; PHOTOACOUSTIC SPECTROSCOPY; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEMICONDUCTING GALLIUM; VACANCIES;

ANNEALING BEHAVIORS; DEFECT FORMATIONS; DIFFUSION MODELS; FLUORINE IMPLANTATIONS; FLUORINE IONS; GAN LAYERS; POST-IMPLANTATION ANNEALING; THERMAL-ANNEALING; VACANCY CLUSTERS; VACANCY COMPLEXES; VACANCY-TYPE DEFECTS;

FLUORINE;

EID: 60349093692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3081019     Document Type: Article

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