Effects of sputtering pressure on the field emission properties of N-doped SrTiO 3 thin films coated on Si tip arrays

Applied Surface Science

Volumn 255, Issue 9, 2009, Pages 4867-4872

  Bian, H J ^a   Chen, X F ^a,b   Pan, J S ^c   Zhu, W ^a   Sun, Chang Q ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Field emission; N doping; Sputtering pressure; SrTiO 3 thin film

Indexed keywords

ELECTRIC FIELDS; ENERGY GAP; FIELD EMISSION; NITROGEN; PEROVSKITE; SEMICONDUCTOR DOPING; SILICON; SPECTROSCOPIC ELLIPSOMETRY; SPUTTERING; STRONTIUM TITANATES; ULTRATHIN FILMS; X RAY DIFFRACTION;

ELECTRON EMISSION PROPERTIES; FIELD EMISSION PROPERTY; N-DOPING; SPUTTERING PRESSURES; SRTIO3 THIN FILMS; THRESHOLD ELECTRIC FIELDS; WATER CONTACT ANGLE MEASUREMENT; X-RAY DIFFRACTION STUDIES;

ELECTRON EMISSION;

EID: 60249103580     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.12.018     Document Type: Article

References (29)

1. Jensen K.L., Lau Y.Y., and McGregor D. Appl. Phys. Lett. 77 (2000) 585
2. Whaley D.R., Gannon B., Smith C.R., Armstrong C.M., and Spindt C.A. IEEE Trans. Plasma. Sci. 28 (2000) 727
3. Jensen K.L., Lau Y.Y., and McGregor D. Solid-State Electron. 45 (2001) 831
4. Gomer R. Field Emission and Field Ionization (1993), American Institute of Physics, New York
5. Amaratunga G.A.J., Veerasamy V.S., Davis C.A., Milne W.I., Mckenzie D.R., Yuan J., and Weiler M. J. Non-Cryst. Solid 164 (1993) 1119
6. Amaratunga G.A.J., and Silva S.R.P. Appl. Phys. Lett. 68 (1996) 2529
7. Zheng W.T., Li J.J., Wang X., Li X.T., Jin Z.S., Tay B.K., and Sun C.Q. J. Appl. Phys. 94 (2003) 2741
8. Okano K., Koizumi S., Silva S.R.P., and Amaratunga G.A.J. Nature 381 (1996) 140
9. Cheah L.K., Shi X., Liu E., and Tay B.K. J. Appl. Phys. 85 (1999) 6816
10. Lim S.C., Stallcup II R.E., Akwani I.A., and Perez J.M. Appl. Phys. Lett. 75 (1999) 1179
11. Sowers A.T., Ward B.L., English S.L., and Nemanich R.J. J. Appl. Phys. 86 (1999) 3973
12. Robertson J. J. Vac. Sci. Technol. B 7 (1999) 659
13. Chen X.F., Zhu W.G., Lu H., Pan J.S., Bian H.J., Tan O.K., and Sun C.Q. International 34 (2008) 971
14. Bian H.J., Chen X.F., Pan J.S., Sun C.Q., and Zhu W. J. Vac. Sci. Technol. B 25 (2007) 3
15. Bian H.J., Chen X.F., Pan J.S., Sun C.Q., and Zhu W. J. Appl. Phys. 102 (2007) 114906
16. van Hattum E.D., Palmero A., Arnoldbik W.M., Rudolph H., and Habraken F.H.P.M. Appl. Phys. Lett. 91 (2007) 171501
17. Palmero A., Rudolph H., and Habraken F.H.P.M. J. Appl. Phys. 101 (2007) 083307
18. Denysenko I.B., Xu S., Rutkevych P.P., Long J.D., Azarenkov N.A., and Ostrikov K. J. Appl. Phys. 95 (2004) 2713
19. Xu S., Ostrikov K.N., Li Y., Tsakadze E.L., and Jones I.R. Phys. Plasmas 8 (2001) 2549
20. Sekiguchi S., Fujimoto M., Kang M.G., and Koizumi S. Jpn. J. Appl. Phys., Part 1 37 (1998) 4140
21. Yu T., Chen Y.F., Liu Z.G., Sun L., Siong X.B., Ming N.B., Ji Z.M., and Zhou J. Appl. Phys. A 64 (1997) 69
22. Ostrikov K. Rev. Mod. Phys. 77 (2005) 489
23. Levchenko I., Ostrikov K., Long J.D., and Xu S. Appl. Phys. Lett. 91 (2007) 113115
24. Shinn N.D., and Tsang K.L. J. Vac. Sci. Technol. A9 (1991) 1558
25. Saha N.C., and Tompkins H.G. J. Appl. Phys. 72 (1992) 3072
26. Zheng W.T., Sun C.Q., and Tay B.K. Solid State Commun. 128 (2003) 381
27. Sun C.Q. Appl. Phys. Lett. 72 (1998) 1706
28. Sun C.Q. Prog. Mater. Sci. 48 (2003) 521
29. Zhao M., Zheng W.T., Li J.C., Wen Z., Gu M.X., and Sun C.Q. Phys. Rev. B 75 (2007) 085427