Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions

Plasma Processes and Polymers

Volumn 5, Issue 8, 2008, Pages 745-752

  Cech, Vladimir ^a   Zemek, Josek ^b   Perina, Vratislav ^c  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c NUCLEAR PHYSICS INSTITUTE   (Czech Republic)

Author keywords

ESCA XPS; FTIR; Plasma enhanced chemical vapor deposition (PECVD); Rutherford back scattering (RBS); Thin films

Indexed keywords

BACKSCATTERING; CHEMICAL ANALYSIS; ELECTRODEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MASS SPECTROMETRY; PLASMA DEPOSITION; PLASMAS; POLYMER FILMS; POLYMERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SILICON WAFERS; STRUCTURE (COMPOSITION); THIN FILMS; VAPORS;

C/SI RATIOS; CHEMICAL STRUCTURES; DEPOSITED FILMS; DEPOSITION CONDITIONS; ELEMENTAL COMPOSITIONS; ESCA/XPS; FTIR; MASS SPECTROSCOPIES; ORGANIC/INORGANIC; PLASMA POLYMERS; PLASMA PRODUCTS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); PULSED-POWER; RUTHERFORD BACK-SCATTERING (RBS); SPECTROSCOPIC TECHNIQUES; THIN POLYMER FILMS; VINYLTRIETHOXYSILANE; XPS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 60049086480     PISSN: 16128850     EISSN: 16128869     Source Type: Journal    
DOI: 10.1002/ppap.200800007     Document Type: Article

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