Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor

Thin Solid Films

Volumn 506-507, Issue , 2006, Pages 50-54

  Yang, Chang Sil ^a   Yu, Young Hun ^a   Lee, Kwang Man ^a   Lee, Heon Ju ^a   Choi, Chi Kyu ^a  

^a Jeju National University   (South Korea)

Author keywords

ICPCVD; Low k; MTMS; Plasma; SiOC( H) film

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; OXIDES; PERMITTIVITY; PLASMAS; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

ICPCVD; LOW-K; MTMS; SIOC(-H) FILM;

THIN FILMS;

EID: 33645227498     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.032     Document Type: Conference Paper

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