Investigation of Cu ion drift through CVD TiSiN into SiO2 under bias temperature stress conditions

ieice electronics express

Volumn 2, Issue 7, 2005, Pages 254-259

  Kawanoue, Takashi ^a   Omoto, Seiichi ^a   Hasunuma, Masahiko ^a   Yoda, Takashi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

BTS; Cu drift; diffusion barrier; silicon oxide; TiSiN

Indexed keywords

EID: 85009561636     PISSN: 13492543     EISSN: None     Source Type: Journal    
DOI: 10.1587/elex.2.254     Document Type: Article

References (4)

1. M. W. Hillen and J. F. Verwey, “Mobile ions in SiO2 layers on Si,” Instabilities in silicon devices: silicon passivation and related instabilities, ed. G. Barbottin and A. Vapaille, pp. 403-439, Elsevier Science Publishers B.V., North-Holland, 1986.
2. S. Mukaigawa, T. Aoki, Y. Shimizu, and T. Kikkawa, “Measurement of copper drift in methylsilsesquiazane-methylsilsesquioxane dielectric films,” Jpn. J. Appl. Phys., vol. 39, pp. 2189-2193, April 2000.
3. H. S. Choe and M. Danek, “MOCVD TiN diffusion barriers for Cu inter connects,” Proc. IITC, pp. 62-64, 1999.
4. G. W. Book, K. Pfeifer, and S. Smith, “Barrier integrity testing of T a using triangular voltage sweep and a novel CV-BTS test structure,” Microelectron. Eng., vol. 64, pp. 255-260, 2004.