Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Novikov, P L ^a,c   Le Donne, A ^a   Cereda, S ^a,d   Miglio, Leo ^a   Pizzini, S ^a   Binetti, S ^a   Rondanini, M ^b   Cavallotti, C ^b   Chrastina, D ^b   Moiseev, T ^b   Von Kanel H ^b   Isella, G ^b   Montalenti, F ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; HYDROGEN; MICROCRYSTALLINE SILICON; NANOCRYSTALLINE ALLOYS; PLASMA DEPOSITION; PLASMAS; PROGRAMMING THEORY; SILANES; VAPOR DEPOSITION; VAPORS;

ATOMIC SCALE; ATOMIC-SCALE MODELS; CHEMICAL VAPORS; CRYSTALLINE FRACTIONS; CRYSTALLINITY; EXPERIMENTAL ANALYSIS; FITTING PARAMETERS; GROWTH PARAMETERS; HYDROGEN DILUTION RATIOS; LOW-ENERGY PLASMAS; NANOCRYSTALLINE FILMS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; SI FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 59849110864     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077187     Document Type: Article

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17. Error bars were computed as standard deviations of the Raman measurements taken at different positions on the wafer: large error bars therefore indicate inhomogeneous films.