Interplay of physical and chemical aspects in the PECVD and etching of thin solid films

Progress in Crystal Growth and Characterization of Materials

Volumn 48-49, Issue 1-3 SPEC. ISS., 2004, Pages 123-165

  Cavallotti, C ^a   Di Stanislao, M ^a   Carra S ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

A1 Computer simulation; A1 Etching; A1 Growth models; A3 Chemical vapor deposition processes; A3 PECVD; A3 Physical vapor deposition processes

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY ANALYZERS; ETCHING; FILM GROWTH; IONIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS;

ELECTRONIC TEMPERATURE; FILM MORPHOLOGY; IONIZED PLASMAS; SURFACE REACTIVITY;

THIN FILMS;

EID: 23844467785     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pcrysgrow.2005.05.003     Document Type: Article

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