A multiscale model of the plasma assisted deposition of crystalline silicon

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 8863-8867

  Rondanini, M ^a   Cereda, S ^b   Montalenti, F ^b   Miglio, L ^b   Cavallotti, C ^a  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Chemical Vapor Deposition; Computer simulation; Molecular dynamics; Nanocrystalline silicon; PECVD; Silane

Indexed keywords

COMPUTER SIMULATION; DEPOSITION RATES; FILM GROWTH; GROWTH RATE; MOLECULAR DYNAMICS; MORPHOLOGY; NANOCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE REACTIONS;

CONSERVATION EQUATION; OPTOELECTRONIC PROPERTIES; PLASMA-REACTOR MODEL;

PLASMA DEPOSITION;

COMPUTER SIMULATION; DEPOSITION RATES; FILM GROWTH; GROWTH RATE; MOLECULAR DYNAMICS; MORPHOLOGY; NANOCRYSTALLINE SILICON; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE REACTIONS;

EID: 34547693447     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.104     Document Type: Article

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