Physical mechanisms of hydrogen-enhanced onset of epitaxial growth of silicon by plasma-enhanced chemical vapor deposition

Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

  Tan, X ^a   Yang, G W ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; EPITAXIAL GROWTH; HYDROGEN; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; NONMETALS; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; VAPORS;

CRYSTALLINE TRANSFORMATION; EPITAXIAL SILICON; KINETIC MONTE CARLO SIMULATIONS; LOW TEMPERATURES; MACROSCOPIC MEASUREMENTS; PHYSICAL MECHANISMS; PHYSICAL PROCESSES; TEMPERATURE DEPENDENCES;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 49749135808     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957674     Document Type: Article

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