Electrical depth profiling in thin SiON layers

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Rozenblat, A ^a   Rosenwaks, Y ^a   Segev, L ^b   Cohen, H ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC LIQUIDS; DEPTH PROFILING; MASS SPECTROMETRY; PHOTOELECTRON SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

CHEMICAL CONTRASTS; COMPOSITIONAL ANALYSIS; ELECTRICAL DATUM; GATE OXIDES; HETEROSTRUCTURES; INHOMOGENEOUS COMPOSITIONS; INTERNAL STRUCTURES; NITROGEN ENRICHMENTS; NON CONTACTS; NON-DESTRUCTIVE; OXIDE LAYERS; SION FILMS; SURFACE CHARGING; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPIES; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS DATUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 59849096353     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073050     Document Type: Article

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