Nitrogen depth profiling in thin oxynitride layers on silicon

Surface and Interface Analysis

Volumn 38, Issue 4, 2006, Pages 267-271

  Budrevich, A ^a   Gladkikh, A ^b   Kaganer, E ^c   Sokolovsky, M ^c  

^a INTEL CORPORATION   (United States)

^b TEL AVIV UNIVERSITY   (Israel)

^c INTEL CORPORATION   (Israel)

Author keywords

Depth profiling; Oxynitrides; Quantification; TOF SIMS

Indexed keywords

INTERFACES (MATERIALS); IONS; NANOSTRUCTURED MATERIALS; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING;

DEPTH PROFILING; OXYNITRIDES; QUANTIFICATION; TOF-SIMS;

NITRIDES;

EID: 33646689126     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2303     Document Type: Conference Paper

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