Simulation of high-K tunnel barriers for nonvolatile floating gate memories

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 599-602

  Specht, Michael ^a   Städele, Martin ^a   Hofmann, Franz ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FLASH MEMORY;

ASYMMETRIC STRUCTURES; FOWLER-NORDHEIM PROGRAMMING; HIGH-K MATERIALS; NONVOLATILE FLOATING GATE MEMORY; PROGRAMMING VOLTAGE; STATE OF THE ART; THERMIONIC CURRENTS; TUNNEL DIELECTRICS;

GATE DIELECTRICS;

EID: 84907711059     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.195002     Document Type: Conference Paper

References (8)

1. J. De Blauwe et al. "A novel aerosol-nanocrystal floating gate device for nonvolatile memory applications", International Electron Devices Meeting 2000, IEEE, Piscataway, NJ, USA, pp. 683-686.
2. J. Bu, M.H.White "Design considerations in scaled SONOS nonvolatile memory devices", Solid State Electronics, vol.45, pp. 113-120 (2001).
3. M. She, T.J. King, C. Hu, W. Zhu, Z. Luo, J.P. Han, T.P.Ma, " JVD Silicon Nitride as tunnel dielectric in p-channel flash memory", IEEE Electron Device Letters, vol.23, no. 2, pp. 91-93 (2002).
4. C.B. Duke, Tunnelling in solids, Solid State Physics Vol.10 edited by F.Seitz, D.Turnbull and H.Ehrenreich (Academic, New York, 1969).
5. R.J. Carter et al. "Electrical characterization of high-K Materials Prepared by Atomic Layer CVD" International Workshop on Gate Insulators, Tokyo (2001).
6. K. K. Likharev, "Layered tunnel barriers for nonvolatile memory devices", Appl. Phys. Lett. vol. 73, pp.2137-39 (1998)
7. G.D. Wilk, R.M. Wallace, T.M. Anthony "High-K gate dielectrics: Current status and material properties considerations", Journal of Applied Physics, vol.89, no.10, pp. 5243-5275 (2001). The effective masses are taken to be 0.5 if unknown so far. We have checked that none of the general conclusions made in this article are affected, if the effective mass of the high-K dielectrics is decreased to meff=0.3.
8. M.Specht, to be published.