Effect of film structure on field emission properties of nitrogen doped hydrogenated amorphous carbon films

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 423-425

  Akasaka, Hiroki ^a   Yamada, Takatoshi ^b   Ohtake, Naoto ^c  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

Amorphous carbon; Bonding structure; Field emission; Nitrogen doping

Indexed keywords

ACETONITRILE; AMORPHOUS CARBON; ATOMIC PHYSICS; ATOMS; CARBON FILMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; FIELD EMISSION; METHANE; NITROGEN; NONMETALS;

A-C:H FILMS; BONDING STRUCTURE; CURRENT-VOLTAGE MEASUREMENTS; DOPING SYSTEMS; ELECTRICAL CONDUCTIVITIES; ELECTRON DONORS; FIELD EMISSION PROPERTIES; FILM STRUCTURES; H TERMINATIONS; HIGH EFFICIENCIES; HYDROGENATED AMORPHOUS CARBON FILMS; NITROGEN ATOMS; NITROGEN DOPING; NITROGEN-DOPED; NITROGEN-DOPED FILMS; THRESHOLD FIELDS;

AMORPHOUS FILMS;

EID: 59649113424     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.10.033     Document Type: Article

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