Improved electrical performance of MILC Poly-Si TFTs using CF4 plasma by etching surface of channel

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 130-132

  Chang, Chih Pang ^a   Wu, YewChung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

CF4 plasma; Metal induced lateral crystallization (MILC); Polycrystalline silicon thin film transistors

Indexed keywords

CRYSTALLIZATION; ETCHING; MOSFET DEVICES; NANOCRYSTALLINE ALLOYS; PLASMA DIAGNOSTICS; PLASMAS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

CF4 PLASMA; CURRENT RATIOS; ELECTRICAL CHARACTERISTICS; ELECTRICAL PERFORMANCE; HIGH FIELDS; HOT-CARRIER STRESS; LOW THRESHOLD VOLTAGES; LOW-LEAKAGE CURRENTS; MANUFACTURING METHODS; MANUFACTURING PROCESS; METAL-INDUCED LATERAL CRYSTALLIZATION (MILC); POLY-SI TFTS; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS; STATE DENSITIES; SUB THRESHOLD SLOPES; TFT PROCESS; THERMAL-ANNEALING; TOP SURFACES; TRAP STATE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 59649101785     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010064     Document Type: Article

References (16)

1. S.-W. Lee and S.-K. Joo, "Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization," IEEE Electron Device Lett., vol. 17, no. 4, pp. 160-162, Apr. 1996.
2. Z. Meng, M. Wang, and M. Wong, "High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications," IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 404-409, Feb. 2000.
3. P. J. van der Zaag, M. A. Verheijen, S. Y. Yoon, and N. D. Young, "Explanation for the leakage current in polycrystalline-silicon thin-film transistors made by Ni-silicide mediated crystallization," Appl. Phys. Lett., vol. 81, no. 18, pp. 3404-3406, Oct. 2002.
4. G. A. Bhat, Z. Jin, H. S. Kwok, and M. Wong, "Effects of longitudinal grain boundaries on the performance of MILC-TFTs," IEEE Electron Device Lett., vol. 20, no. 2, pp. 97-99, Feb. 1999.
5. Z. Jin, K.Moulding, H. S. Kowk, and M.Wong, "Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers," IEEE Electron Device Lett., vol. 20, no. 4, pp. 167-169, Apr. 1999.
6. S. Y. Yoon, K. H. Kim, C. O. Kim, J. Y. Oh, and J. Jang, "Low temperature metal induced crystallization of amorphous silicon using a Ni solution," J. Appl. Phys., vol. 82, no. 11, pp. 5865-5867, Dec. 1997.
7. Z. Jin, G. A. Bhat, M. Yeung, H. S. Kwok, andM.Wong, "Nickel induced crystallization of amorphous silicon thin films," J. Appl. Phys., vol. 84, no. 1, pp. 194-200, Jul. 1998.
8. C. M. Hu, Y. S. Wu, and C. C. Lin, "Improving the electrical properties of NILC poly-Si films using a gettering substrate," IEEE Electron Device Lett., vol. 28, no. 11, pp. 1000-1003, Nov. 2007.
9. I.-W. Wu, W. B. Jackson, T.-Y. Huang, A. G. Lewis, and A. C. Chiang, "Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation," IEEE Electron Device Lett., vol. 12, no. 4, pp. 181-183, Apr. 1991.
10. C. P. Chang and Y. S. Wu, "Improved electrical characteristics and reliability of MILC poly-Si TFTs using fluorine-ion implantation," IEEE Electron Device Lett., vol. 28, no. 11, pp. 990-992, Nov. 2007.
11. J. Levinson, G. Este, M. Rider, P. J. Scanlon, F. R. Shepherd, and W. D. Westwood, "Conductivity behavior in polycrystalline semiconductor thin film transistors," J. Appl. Phys., vol. 53, no. 2, pp. 1193-1202, Feb. 1982.
12. R. E. Proano, R. S. Misage, and D. G. Ast, "Development and electrical properties of undoped polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1915-1922, Sep. 1989.
13. S. Banerjee, R. Sundraesan, H. Shichijo, and S. Malhi, "Hot-electron degradation of n-channel polysilicon MOSFETs," IEEE Trans. Electron Devices, vol. 35, no. 2, pp. 152-157, Feb. 1988.
14. M. Hack, A. G. Lewis, and I. W. Wu, "Physical models for degradation effects in polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 40, no. 5, pp. 890-897, May 1993.
15. C. H. Tu, T. C. Chang, P. T. Liu, C. Y. Yang, H. C. Liu, W. R. Chen, Y. C. Wu, and C. Y. Chang, "Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC," IEEE Electron Device Lett., vol. 27, no. 4, pp. 262-264, Apr. 2006.
16. C. H. Tu, T. C. Chang, P. T. Liu, H. W. Zan, Y. H. Tai, C. Y. Yang, Y. C. Wu, H. C. Liu, W. R. Chen, and C. Y. Chang, "Enhanced performance of poly-Si thin film transistors using fluorine ions implantation," Electrochem. Solid-State Lett., vol. 8, no. 9, pp. G246-G248, Jul. 2005.