The effects of ash3 preflow conditions at low temperature on the morphology of gaas buffer layers for gaas/si grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 30, Issue 11B, 1991, Pages L1967-L1970

  Asai, Koyu ^a   Fujita, Kazuhisa ^a   Shiba, Yasunari ^a  

^a Sumitomo Metal Industries Ltd   (Japan)

Author keywords

AsH3 preflow conditions; GaAs islands; GaAs on Si; Metalorganic chemical vapor deposition; Surface morphology

Indexed keywords

MICROSCOPIC EXAMINATION - SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS - GROWTH; SEMICONDUCTING SILICON - SUBSTRATES;

METALORGANIC CHEMICAL VAPOR DEPOSITION; PREFLOW CONDITIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0141488011     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L1967     Document Type: Article

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