A fully integrated 7.3 kV HBM ESD-protected transformer-based 4.56 GHz CMOS LNA

IEEE Journal of Solid-State Circuits

Volumn 44, Issue 2, 2009, Pages 344-353

  Borremans, Jonathan ^a   Thijs, Steven ^a   Wambacq, Piet ^a,b   Rolain, Yves ^b   Linten, Dimitri ^a   Kuijk, Maarten ^b  

^a IMEC   (Belgium)

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

Author keywords

CMOS; ESD protection; Low noise amplifier; Transformer

Indexed keywords

AUDIO FREQUENCY AMPLIFIERS; ELECTRIC EQUIPMENT PROTECTION; ELECTRIC POWER SYSTEM PROTECTION; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; LOW NOISE AMPLIFIERS;

AREA PENALTIES; CMOS; CMOS LNA; DEEP SUB MICRONS; ESD PROTECTION; FULLY INTEGRATED; LOW-NOISE AMPLIFIER; MASK COSTS; OXIDE THICKNESS; POWER GAINS; PROTECTION LEVELS; RF PERFORMANCE; RF-CIRCUITS; SILICON AREAS; TRANSFORMER; TWO STAGES;

TRANSFORMER PROTECTION;

EID: 59349095579     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.2010828     Document Type: Article

References (17)

1. S. Hyvonen, S. Joshi, and E. Rosenbaum, "Cancellation technique to provide ESD protection for multi-GHz RF inputs," Electron. Lett., vol. 39, no. 3, pp. 284-286, 2003.
2. D. Linten, S. Thijs, W. Jeamsaksiri, J. Ramos, A. Mercha, M. I. Natarajan, P. Wambacq, A. J. Scholten, and S. Decoutere, "An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90 nm RF CMOS," in Symp. VLSI Circuits 2005 Dig. Tech. Papers, Jun. 16-18, 2005, pp. 86-89.
3. ESD Sensitivity Testing, Human Body Model (HBM)-Component Level, chapter S5.1. ESD Association Standard, 1993.
4. D. Linten, S. Thijs, M. I. Natarajan, P. Wambacq, W. Jeamsaksiri, J. Ramos, A. Mercha, S. Jenei, S. Donnay, and S. Decoutere, "A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS," IEEE J. Solid-State Circuits, vol. 40, no. 7, pp. 1434-1442, Jul. 2005.
5. S. Thijs, M. I. Natarajan, D. Linten, V. Vassilev, T. Daenen, A. Scholten, R. Degraeve, P. Wambacq, and G. Groeseneken, "ESD protection for 5.5 GHz LNA in 90 nm RF CMOS implementation concepts, constraints and solutions," in Proc. 26th EOS/ESD Symp., 2004, pp. 40-49.
6. J. Borremans, S. Thijs, P. Wambacq, D. Linten, Y. Rolain, and M. Kuijk, "A 5 kV HBM transformer-based ESD protected 5-6 GHz LNA," in Symp. VLSI Circuits Dig., 2007, pp. 100-101.
7. D. K. Shaeffer and T. H. Lee, "A 1.5-V, 1.5-GHz CMOS low noise amplifier," IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 745-759, May 1997.
8. P. Andreani and H. Sjöland, "Noise optimization of an inductively degenerated CMOS low noise amplifier," IEEE Trans. Circuits Syst. II: Express Briefs, vol. 48, no. 9, pp. 835-841, Sep. 2001.
9. J. R. Long, "Monolithic transformers for silicon RF IC design," IEEE J. Solid-State Circuits, vol. 35, pp. 1368-1382, 2000.
10. ASITIC, [Online]. Available: http://rfic.eecs.berkeley.edu/~niknejad/ asitic.html
11. HFSS. [Online]. Available: www.ansoft.com
12. L. F. Tiemeijer, R. J. Havens, Y. Bouttement, and H. J. Pranger, "The impact of an aluminum top layer on inductors integrated in an advanced CMOS copper backend," IEEE Electron Device Lett., vol. 25, pp. 722-724, 2004.
13. ESD Sensitivity Testing, Charged Device Model (CDM)-Component Level, chapter S5.3. ESD Association Standard, 1999.
14. M. Scholz, S. Thijs, D. Linten, D. Tremouilles, M. Sawada, T. Nakaei, T. Hasebe, M. I. Natarajan, and G. Groeseneken, "Calibrated wafer-level HBM measurements for quasi-static and transient device analysis," in Proc. 29th EOS/ESD Symp., S. Thijs, Ed., 2007, pp. 2A.2-1-2A.2-6.
15. C.-P. Chang, J.-A. Hou, J. Su, C.-W. Chen, T.-S. Liou, S.-C. Wong, and Y.-H. Wang, "A high gain and low supply voltage LNA for the direct conversion application with 4-kV HBM ESD protection in 90-nm RF CMOS," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 11, pp. 612-614, 2006.
16. M. El Kaamouchi, M. El Kaamouchi, M. Si Moussa, P. Delatte, G. Wybo, A. Bens, J.-P. Raskin, and D. Vanhoenacker-Janvier, "A 2.4-GHz fully integrated ESD-protected low-noise amplifier in 130-nm PD SOI CMOS technology," IEEE Trans. Microw. Theory Tech., vol. 55, pp. 2822-2831, 2007.
17. S. Hyvonen and E. Rosenbaum, "Diode-based tuned ESD protection for 5.25 GHz CMOS LNAs," in Proc. 27th EOS/ESD Symp., Sep. 2005, p. 917.