A high gain and low supply voltage LNA for the direct conversion application with 4-KV HBM ESP protection in 90-nm RF CMOS

IEEE Microwave and Wireless Components Letters

Volumn 16, Issue 11, 2006, Pages 612-614

  Chang, Chieh Pin ^b   Hou, Jian An ^b   Su, Jionguang ^c   Chen, Chih Wei ^c   Liou, Tsyr Shyang ^c   Wong, Shyh Chyi ^c   Wang, Yeong Her ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c RichWave Technology Corporation   (Taiwan)

Author keywords

CMOS; Electrostatic discharge (ESD); Low noise amplifier (LNA); Noise figure (NF); Radio frequency (RF)

Indexed keywords

ELECTROSTATIC DISCHARGE (ESD); HUMAN BODY MODEL (HBM); LOW NOISE AMPLIFIER (LNA); NOISE FIGURE (NF); RADIO FREQUENCY (RF);

ACOUSTIC NOISE; CMOS INTEGRATED CIRCUITS; ELECTRIC DISCHARGES; MATHEMATICAL MODELS; VOLTAGE CONTROL;

POWER AMPLIFIERS;

EID: 33750814423     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.884911     Document Type: Article

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