An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90 nm RF CMOS

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn 2005, Issue , 2005, Pages 86-89

  Linten, D ^a,b   Thijs, S ^a   Jeamsaksiri, W ^a   Ramos, J ^a   Mercha, A ^a   Natarajan, M I ^a   Wambacq, P ^a,b   Scholten, A J ^c   Decoutere, S ^a  

^a IMEC   (Belgium)

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

CMOS; ESD; LNA; Radio frequency

Indexed keywords

ESD; HUMAN BODY MODEL (HBM); LNA; RADIO FREQUENCY;

AMPLIFIERS (ELECTRONIC); DIODES; ELECTROSTATICS; POWER INDUCTORS; SPURIOUS SIGNAL NOISE;

CMOS INTEGRATED CIRCUITS;

EID: 33745170086     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIC.2005.1469340     Document Type: Conference Paper

References (10)

1. W. Jeamsaksiri, et al., "Integration of a 90 nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA", IEEE Symposium on VLSI Technology, June 2004, pp. 100-101.
2. D. Linten, et al., "Low-power 5 GHz LNA and VCO in 90 nm RF CMOS", IEEE Symposium on VLSI Circuits, June 2004, pp. 372-375.
3. V.Vassilev, et al., "ESD-RF co-design methodology for the state of the art RF -CMOS blocks", in Journal of Microelectronics Reliability, 2004, In Press.
4. S. Hyvonen, et al., "Comprehensive ESD protection for RF inputs", in Proc. EOS/ESD Symposium, June 2003, pp.188-194.
5. P. Leroux, et al., "A 5 GHz CMOS Low-Noise Amplifier with Inductive ESD Protection Exceeding 3 kV HBM", in Proc Eur. Solid-State Circuits Conf., Sept. 2004, pp. 295-298.
6. S. Thijs, et al., "ESD Protection for a 5.5 GHz LNA in 90 nm RF CMOS - Implementation Concepts, Constraints and Solutions", in Proc EOS/ ESD Symposium, Sept.2004, pp.40-49.
7. D. Linten, et al., "A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS" in Proc Eur. Solid-Slate Circuits Conf., Sept. 2004, pp. 291-294.
8. ESD association standard tesl method Human Body Model (HBM) ComponentLevel:ANSI-STM5.1-2001;http://www. esda.org/slandards.hlml
9. D. K. Shaeffer and T. H. Lee, "A 1.5-V 1.5-GHz CMOS: Low noise amplifier," IEEE J. Solid-Slate Circuits, vol. 32, pp. 745-759, May 1997.
10. www.semiconductors.philips.com/Philips Models