Mapping of metallic contamination using TXRF

Solid State Phenomena

Volumn 134, Issue , 2008, Pages 269-272

  Danel, A ^a   Borde, Y ^b   Veillerot, M ^a   Cabuil, N ^b   Kono, H ^c   Yamagami, M ^c  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c RIGAKU CORPORATION   (Japan)

Author keywords

Metallic contamination; Silicon wafer; TXRF

Indexed keywords

EID: 38549148387     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.134.269     Document Type: Conference Paper

References (4)

1. D. Hellin et al., "Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology", to be published in Spectrochemica Acta part B, 2006.
2. Y. Mori et al., "Whole surface analysis of semiconductor wafers by accumulating short-time mapping data of totalreflection X-ray fluorescence spectrometry", Anal. Chem. 74 (2002), pp 1104-1110.
3. A. Danel et al., "Comparison of D-TXRF, SP-TXRF and VPD-TXRF applied to the characterization of metallic contamination on semiconductor wafers", to be published in Spectrochemica Acta part B, 2006.
4. A. Danel et al., "Management of metallic contamination in advanced IC manufacturing", ECS Transactions, 1-3 (2005), pp 3-10.