Sweeping total reflection X-ray fluorescence optimisation to monitor the metallic contamination into IC manufacturing

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 63, Issue 12, 2008, Pages 1370-1374

  Borde, Yannick ^a   Danel, Adrien ^b   Roche, Agnes ^a   Veillerot, Marc ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

Metallic contamination; Silicon wafer; TXRF

Indexed keywords

CONTAMINATION; ELECTROMAGNETIC WAVE REFLECTION; FLUORESCENCE; INTEGRATED CIRCUITS; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; X RAYS;

FLUORESCENCE MODES; IC MANUFACTURING; INTEGRATED CIRCUIT MANUFACTURING; INTEGRATION TIME; LIMIT OF DETECTIONS; LIMIT OF QUANTIFICATIONS; LOW LEVELS; MEASUREMENT POINTS; MEASUREMENT RESULTS; METALLIC CONTAMINATION; ON WAFERS; OPTIMISATION; SILICON WAFER; SURFACE CONTAMINATIONS; SURFACE COVERAGES; TOTAL REFLECTIONS; TXRF; X-RAY FLUORESCENCES;

POLLUTION DETECTION;

EID: 59349095037     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2008.10.034     Document Type: Article

References (4)

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2. Mori Y., Uemura K., and Lizuka Y. Whole surface analysis of semiconductor wafers by accumulating short-time mapping data of total-reflection X-ray fluorescence spectrometry. Anal. Chem. 74 (2002) 1104-1110
3. Danel A., Borde Y., Veilleraot M., Cabuil N., and Konho H. Mapping of metallic contamination using TXRF. Solid State Phenom. 134 (2008) 269-272
4. Klockenkamper R. Total-reflection X-ray fluorescence analysis. In: Wineforner J.D. (Ed). Chemical Analysis part A: Series of Monograph on Analytical Chemistry and Its Applications 140 (1997), New York