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Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 3, 2009, Pages 276-282

Electromigration-induced cracks in eutectic SnPb solder reaction couple at room temperature

(3) Xu, G C a He, H W a Guo, F a

a BEIJING UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

63SN-37PB; ANODE SIDE; CRACK INITIATION AND PROPAGATION; CURRENT CROWDING; DENSITY DISTRIBUTIONS; ELECTROMIGRATION (EM); ELECTRON FLOWS; ELECTRON WIND; HIGH CURRENTS; ROOM-TEMPERATURE (RT); SN PB SOLDER; UNIFOR M DISTRIBUTION;

BRAZING; CRACKS; DISSIMILAR MATERIALS; ELECTROMIGRATION; LEAD; LEAD ALLOYS; TENSILE STRENGTH; TENSILE STRESS; WELDING;

TIN;

EID: 58549102484 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9720-3 Document Type: Article

Times cited : (8)

References (13)

1
- 33845697813
- doi: 10.1007/s10854-006-9023-5
- K.J. Puttlitz, G.T. Galyon, J. Mater. Sci. Mater. Electron. 18, 331 (2007). doi: 10.1007/s10854-006-9023-5
- (2007) J. Mater. Sci. Mater. Electron. , vol.18 , pp. 331
- Puttlitz, K.J.¹ Galyon, G.T.²

2
- 0035504021
- doi: 10.1063/1.1400096
- T.Y. Lee, K.N. Tu, D.R. Frear, J. Appl. Phys. 90, 4502 (2001). doi: 10.1063/1.1400096
- (2001) J. Appl. Phys. , vol.90 , pp. 4502
- Lee, T.Y.¹ Tu, K.N.² Frear, D.R.³

3
- 0032614180
- doi: 10.1063/1.124276
- C.Y. Liu, C. Chen, C.N. Liao, K.N. Tu, Appl. Phys. Lett. 75, 58 (1999). doi: 10.1063/1.124276
- (1999) Appl. Phys. Lett. , vol.75 , pp. 58
- Liu, C.Y.¹ Chen, C.² Liao, C.N.³ Tu, K.N.⁴

4
- 0036612340
- doi: 10.1007/BF02701847
- H. Gan, W.J. Choi, G. Xu, K.N. Tu, JOM 6, 34 (2002). doi: 10.1007/ BF02701847
- (2002) JOM , vol.6 , pp. 34
- Gan, H.¹ Choi, W.J.² Xu, G.³ Tu, K.N.⁴

5
- 0035868113
- doi: 10.1063/1.1342023
- T.Y. Lee, K.N. Tu, S.M. Kuo, D.R. Frear, J. Appl. Phys. 89, 3189 (2001). doi: 10.1063/1.1342023
- (2001) J. Appl. Phys. , vol.89 , pp. 3189
- Lee, T.Y.¹ Tu, K.N.² Kuo, S.M.³ Frear, D.R.⁴

6
- 33645517630
- doi: 10.1063/1.2158702
- L. Zhang, S. Ou, J. Huang, K.N. Tu, S. Gee, L. Nguyen, Appl. Phys. Lett. 88, 012106 (2006). doi: 10.1063/1.2158702
- (2006) Appl. Phys. Lett. , vol.88 , pp. 012106
- Zhang, L.¹ Ou, S.² Huang, J.³ Tu, K.N.⁴ Gee, S.⁵ Nguyen, L.⁶

7
- 22944433854
- doi: 10.1063/1.1949719
- J.W. Nah, J.O. Suh, K.W. Paik, K.N. Tu, J. Appl. Phys. 98, 013715 (2005). doi: 10.1063/1.1949719
- (2005) J. Appl. Phys. , vol.98 , pp. 013715
- Nah, J.W.¹ Suh, J.O.² Paik, K.W.³ Tu, K.N.⁴

8
- 79958223410
- doi: 10.1063/1.1432443
- E.C.C. Yeh, W.J. Choi, K.N. Tu, P. Elenius, H. Balkan, Appl. Phys. Lett. 80, 580 (2002). doi: 10.1063/1.1432443
- (2002) Appl. Phys. Lett. , vol.80 , pp. 580
- Yeh, E.C.C.¹ Choi, W.J.² Tu, K.N.³ Elenius, P.⁴ Balkan, H.⁵

9
- 0346935270
- doi: 10.1063/1.1628388
- J.W. Nah, K.W. Paik, J.O. Suh, K.N. Tu, J. Appl. Phys. 94, 7560 (2003). doi: 10.1063/1.1628388
- (2003) J. Appl. Phys. , vol.94 , pp. 7560
- Nah, J.W.¹ Paik, K.W.² Suh, J.O.³ Tu, K.N.⁴

10
- 21244479726
- doi: 10.1063/1.1935772
- H.T. Orchard, A.L. Greer, Appl. Phys. Lett. 86, 231906 (2005). doi: 10.1063/1.1935772
- (2005) Appl. Phys. Lett. , vol.86 , pp. 231906
- Orchard, H.T.¹ Greer, A.L.²

11
- 0035871134
- doi: 10.1063/1.1357459
- Q.T. Huynh, C.Y. Liu, C. Chen, K.N. Tu, J. Appl. Phys. 89, 4332 (2001). doi: 10.1063/1.1357459
- (2001) J. Appl. Phys. , vol.89 , pp. 4332
- Huynh, Q.T.¹ Liu, C.Y.² Chen, C.³ Tu, K.N.⁴

12
- 20444462371
- doi: 10.1063/1.1861151
- H. Gan, K.N. Tu, J. Appl. Phys. 97, 063514 (2005). doi: 10.1063/1.1861151
- (2005) J. Appl. Phys. , vol.97 , pp. 063514
- Gan, H.¹ Tu, K.N.²

13
- 33746822628
- doi: 10.1063/1.2216487
- R. Agarwal, S. Ou, K.N. Tu, J. Appl. Phys. 100, 024909 (2006). doi: 10.1063/1.2216487
- (2006) J. Appl. Phys. , vol.100 , pp. 024909
- Agarwal, R.¹ Ou, S.² Tu, K.N.³

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