Room-temperature epitaxial growth of high quality AlN on SiC by pulsed sputtering deposition

Applied Physics Express

Volumn 2, Issue 1, 2009, Pages 0110031-0110033

  Sato, Kazuhiro ^a   Ohta, Jitsuo ^a   Inoue, Shigeru ^a   Kobayashi, Atsushi ^a   Fujioka, Hiroshi ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GROWTH (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SOIL CONSERVATION; TWO DIMENSIONAL;

ALN FILMS; FLAT SURFACES; HIGH QUALITY (HQ); MAXIMUM VALUES; MISFIT DISLOCATION (MD); ROOM-TEMPERATURE (RT); RT GROWTH; X RAY RECIPROCAL SPACE MAPPING (XRSM); X RAY ROCKING CURVES (XRC);

EPITAXIAL GROWTH;

EID: 58449101831     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.011003     Document Type: Article

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