Layer-by-layer growth of AlN on ZnO(0001) substrates at room temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 42-45, 2006, Pages

  Ueno, Kohei ^a   Kobayashi, Atsushi ^a   Ohta, Jitsuo ^a,b   Fujioka, Hiroshi ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

AIN; Crystal growth; Epitaxial growth; Molecular beam epitaxy; Pulsed laser deposition; ZnO

Indexed keywords

HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; ZINC OXIDE;

HETEROINTERFACES; LAYER-BY-LAYER MODES; ROOM TEMPERATURE (RT);

EPITAXIAL GROWTH;

EID: 34047262732     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1139     Document Type: Article

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