Epitaxial growth mechanisms of AlN on SiC substrates at room temperature

Applied Physics Letters

Volumn 91, Issue 15, 2007, Pages

  Kim, Myunghee ^a   Ohta, Jitsuo ^b,c   Kobayashi, Atsushi ^b   Fujioka, Hiroshi ^b,c   Oshima, Masaharu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN NUCLEI; GROWTH MECHANISMS; LAYER BY LAYER MODE;

EPITAXIAL GROWTH; FILM GROWTH; PROBABILITY DISTRIBUTIONS; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS;

METALLIC FILMS;

EID: 35248891453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2795804     Document Type: Article

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