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Volumn 45, Issue 7, 2006, Pages 5724-5727

Characteristics of single crystal ZnO annealed in a ceramic ZnO box and its application for epitaxial growth of GaN

Author keywords

Annealing; Atomically flat surface; GaN; Pulsed laser deposition; ZnO

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SINGLE CRYSTALS;

ATOMICALLY FLAT SURFACE; CRYSTAL QUALITY; TERRACED STRUCTURES;

ZINC OXIDE;

EID: 33746891942 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.5724 Document Type: Article

Times cited : (25)

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