Epitaxial growth of GaN on copper substrates

Applied Physics Letters

Volumn 88, Issue 26, 2006, Pages

  Inoue, S ^a   Okamoto, K ^a   Matsuki, N ^b   Kim, Tae Won ^b   Fujioka, H ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; COPPER; EPITAXIAL GROWTH; IMAGE ANALYSIS; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES;

COPPER SUBSTRATES; ELECTRON BACKSCATTERING DIFFRACTION; ELLIPSOMETRY MEASUREMENTS; HETEROINTERFACES;

GALLIUM NITRIDE;

EID: 33745713678     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213178     Document Type: Article

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