Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization

Journal of Materials Processing Technology

Volumn 209, Issue 4, 2009, Pages 1729-1735

  Lee, Hyunseop ^a   Park, Boumyoung ^a   Jeong, Haedo ^a  

^a Pusan National University   (South Korea)

Author keywords

Chemical mechanical planarization (CMP); Colloidal silica; Copper; Material removal rate (MRR) profile; Sliding distance

Indexed keywords

ABRASIVES; ACIDS; CHEMICAL MECHANICAL POLISHING; CITRIC ACID; CORROSION INHIBITORS; HYDROGEN; HYDROGEN PEROXIDE; NANOTECHNOLOGY; OXIDATION; OXIDES; POLISHING; SILICA; SLURRIES;

ABRASIVE CONCENTRATIONS; BENZOTRIAZOLE; CHEMICAL MECHANICAL PLANARIZATION (CMP); CMP SLURRIES; COLLOIDAL SILICA; COMPLEXING AGENTS; COPPER CHEMICAL MECHANICAL PLANARIZATION; COPPER CMP; KEY FACTORS; MATERIAL REMOVAL MECHANISMS; MATERIAL REMOVAL RATE (MRR) PROFILE; MECHANICAL EFFECTS; MECHANICAL FACTORS; POLISHING HEADS; POLISHING PRESSURES; PROCESS CONDITIONS; ROTATIONAL VELOCITIES; SLIDING DISTANCE; WAFER EDGES;

COPPER;

EID: 58249126471     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2008.04.021     Document Type: Article

References (25)

1. Chiou H.W., Lin Z.H., Kuo L.H., Shih S.Y., Chen L.J., and Hsia C. Thermal impact and process diagnosis of copper chemical mechanical polish. Proceedings of the Interconnect Technology 1999. IEEE International Conference. San Francisco, USA, 24-26 May (1999) IITC 99-83-IITC 99-85
2. Cooper K., Gupta A., and Beaudoin S. Simulation of particle adhesion: implications in chemical mechanical polishing and post chemical mechanical polishing cleaning. J. Electrochem. Soc. 148 11 (2001) G662-G667
3. Ernur D., Terzieva V., Wu W., Brongersma S.H., and Maex K. Corrosion of narrow copper damascene interconnects. J. Electrochem. Soc. 151 12 (2004) B636-B643
4. Gorantla V.R.K., Assiongbon K.A., Babu S.V., and Roy D. Citric acid as a complexing agent in CMP of copper. J. Electrochem. Soc. 152 5 (2005) 404-410
5. Guo L., and Subramanian R.S. Mechanical removal in CMP of copper using alumina abrasives. J. Electrochem. Soc. 151 2 (2004) G104-G108
6. 2 Slurry. Thin Solid Films 462-463 (2004) 186-191
7. Homma Y., Fukushima K., Kondo S., and Sakuma N. Effects of mechanical parameters on CMP characteristics analyzed by two-dimensional frictional-force measurement. J. Electrochem. Soc. 150 12 (2003) G751-G757
8. Hu C.-K., Luther B., Kaufman F.B., Hummel J., Uzoh C., and Pearson D.J. Copper interconnection integration and reliability. Thin Solid Films 262 1-2 (1995) 84-92
9. Johnson K.L. Contact Mechanics. first ed. (1985), Cambridge University Press, New York pp. 35-42
10. Kwon D., Kim H., and Jeong H. Heat and its effects to chemical mechanical polishing. J. Mater. Process Technol. 178 (2006) 82-87
11. Lee S., Kim H., Ahn D., and Jeong H. A study on novel conditioning for CMP. J. Korean Soc. Precis. Eng. 16 5 (1999) 40-46
12. Li Z., Borucki L., Koshiyama I., and Philipossian A. Effect of slurry flow rate on tribological, thermal, and removal rate attributes of copper CMP. J. Electrochem. Soc. 151 7 (2004) G482-G487
13. Liu F., and Sutcliffe M.P.F. Modelling of delamination of ultra low-k material during chemical mechanical polishing. Tribol. Lett. 25 3 (2006) 225-236
14. Luo Q., and Babu S.V. Dishing effects during chemical mechanical polishing of copper in acidic media. J. Electrochem. Soc. 147 12 (2000) 4639-4644
15. Luo Y., Du T., and Desai V. Chemical-mechanical planarization of copper: the effect of inhibitor and complexing agent. Materials Research Society Proceedings 767. San Francisco, USA, 21-25 April (2003) F6.10.1-F6.10.6
16. Matsuo H., Ishikawa A., and Kikkawa T. Role of frictional force on the polishing Rte of Cu chemical mechanical polishing. Jpn J. Appl. Phys. 43 4B (2004) 1813-1819
17. Matsuo H., Kondo S., Ishikawa A., Fukaya K., Kobayashi N., and Kikkawa T. Effect of frictional force vector on delamination in Cu/low-k integration. Microelectron. Eng. 83 (2006) 2146-2149
18. Mejia D.C., and Beaudoin S. A locally relevant Prestonian model for wafer polishing. J. Electrochem. Soc. 150 2 (2003) G96-G102
19. Preston F.W. The theory and design of plate glass polishing machines. J. Soc. Glass Technol. 9 (1927) 214-256
20. Sasada T., Oike M., and Emori N. The effect of abrasive grain size on the transition between abrasive and adhesive wear. Wear 97 3 (1984) 291-302
21. Seal S., Kuiry S.C., and Heinmen B. Effect of glycine and hydrogen peroxide on chemical mechanical planarization of copper. Thin Solid Films 423 (2003) 243-251
22. Seo Y.J., Kim S.Y., and Lee W.S. Reduction of process defects using a modified set-up for chemical mechanical polishing equipment. Microelectron. Eng. 65 (2003) 371-379
23. Sorooshian J., DeNardis D., Charns L., Li Z., Shadman F., Boning D., Hetherington D., and Philipossian A. Arrhenius characterization of ILD and copper CMP process. J. Electrochem. Soc. 151 2 (2004) G85-G88
24. Stachowiak G.W., and Batchelor A.W. Engineering Tribology. first ed. (1993), Elsevier, Amsterdam, The Netherlands pp. 561-562
25. Tseng W.T., Wang Y.H., and Chin J.H. Effects of film stress on the chemical mechanical polishing process. J. Electrochem. Soc. 146 11 (1999) 4273-4280