Chemical mechanical polishing of copper layer employing MnO2 slurry

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 186-191

  Hara, Tohru ^a   Balakumar, S ^b  

^a HOSEI UNIVERSITY   (Japan)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Abrasive free slurries; Adhesion strength; Barriers; CMP; Critical pressure

Indexed keywords

ABRASIVE FREE SLURRIES; ADHESION STRENGTH; BARRIER LAYERS; CRITICAL PRESSURES;

ABRASIVES; ADHESION; CHEMICAL MECHANICAL POLISHING; DELAMINATION; DEPOSITION; MANGANESE COMPOUNDS; PERMITTIVITY; PRESSURE EFFECTS; SLURRIES; STRESS RELAXATION;

COPPER;

EID: 4344568075     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.123     Document Type: Article

References (11)

1. Edelstein D., Heidenreich J., Goldblatt R., Cote W., Zoh C., Lustig N., Roper P., Schlz R., Stattery J. Tech. Dig., Int. Electron Devices Meet. 773:1997;89.
2. Hara T., Sakata K. Electrochem. Solid-State Lett. 4(G77):2001;125.
3. Hara T., Sakata K., Kawaguchi A., Kamijima S. Electrochem. Solid-State Lett. 4(11):2001;. (C57).
4. Nogami T., Remero J., Dubin V., Brown D., Adam E. Proc. of the IITC. 1998 (June 15);298 IEEE, Electron Device.
5. Hara T. VMIC Asia, Invited Talk, Nov. 2002, Singapore. 2002;161. IMIC, South Florida University.
6. Hara T., Toida H. Electrochem. Solid-State Lett. 5:2002;C102.
7. Hara T., Yoshida Y., Toida H. Electrochem. Solid-State Lett. 5:2002;G36.
8. Hara T., Namiki K. J. Electrochem. Soc. 120:2004 (May).
9. Hara T., Kishi H. The Meeting of Applied Phys. Soc. Japan. March 2004;PM-24.
10. Hara T. 8th International Conf. CMP-MIC. 2003 (Feb.);199 Marina Del Rey. IMIC, South Florida University.
11. Fujimoto M., Hara T. Proc. of The Meeting of Applied Phys. Soc. Japan. 2004;PM-15.