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Volumn 94, Issue 1, 2009, Pages

Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM; NITRIDES; OPTOELECTRONIC DEVICES; OXIDE FILMS; PHOTODETECTORS; SEMICONDUCTING GALLIUM; TIN; TITANIUM COMPOUNDS;

EID: 58149481636     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3064130     Document Type: Article
Times cited : (28)

References (15)
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  • 3
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    • Lee, M.-L.1    Sheu, J.-K.2    Lin, S.W.3
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    • 0021-8979 10.1063/1.370861, (), and references therein.
    • V. M. Bermudez, J. Appl. Phys. 0021-8979 10.1063/1.370861 86, 1170 (1999), and references therein.
    • (1999) J. Appl. Phys. , vol.86 , pp. 1170
    • Bermudez, V.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.