Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes

Solid-State Electronics

Volumn 49, Issue 12, 2005, Pages 1969-1973

  Pulfrey, D L ^a   Parish, G ^b   Wee, D ^b   Nener, B D ^b  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

Minority carrier diffusion length; p GaN; Photodiodes; Schottky barrier

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTERING; SURFACE PHENOMENA;

MINORITY CARRIER DIFFUSION LENGTH; P-GAN; SCHOTTKY BARRIER; SURFACE LAYER;

PHOTODIODES;

EID: 28044454144     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.09.013     Document Type: Article

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