A spectroscopic ellipsometry study of TiO2 thin films prepared by ion-assisted electron-beam evaporation

Current Applied Physics

Volumn 9, Issue 3, 2009, Pages 707-712

  Eiamchai, Pitak ^a   Chindaudom, Pongpan ^b   Pokaipisit, Artorn ^a   Limsuwan, Pichet ^a  

^a KING MONGKUT'S UNIVERSITY OF TECHNOLOGY THONBURI   (Thailand)

^b NATIONAL ELECTRONICS AND COMPUTER TECHNOLOGY CENTER   (Thailand)

Author keywords

Ellipsometry; Evaporation; Titanium dioxide

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; EVAPORATION; FILM PREPARATION; GALLIUM ALLOYS; INTEGRATED OPTOELECTRONICS; ION BEAM ASSISTED DEPOSITION; LIGHT REFRACTION; MODELS; MOISTURE; OPTICAL PROPERTIES; OXIDE MINERALS; OXIDES; OXYGEN; REFRACTIVE INDEX; REFRACTOMETERS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; TITANIUM; TITANIUM DIOXIDE; TITANIUM OXIDES; VAPORS;

AIR ATMOSPHERES; ANGLE SPECTROSCOPIC ELLIPSOMETRIES; ANNEALED FILMS; BAND GAPS; BEAM EVAPORATIONS; DEPOSITED FILMS; DIFFRACTOMETRY; FILM CHARACTERIZATIONS; LORENTZ DISPERSION MODELS; MODELING PROCESSES; NOMINAL THICKNESSES; OPTICAL CHARACTERISTICS; OPTICAL MODELING; OXYGEN FLOW RATES; PHYSICAL MODELS; RUTILE PHASES; TRANSITION TEMPERATURES;

OPTICAL FILMS;

EID: 58149466597     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.06.011     Document Type: Article

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