Impact of geometry-dependent parasitic capacitances on the performance of CNFET circuits

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 380-382

  Paul, Bipul C ^a,b   Fujita, Shinobu ^b   Okajima, Masaki ^b   Lee, Thomas ^a  

^a Stanford University   (United States)

^b Toshiba America Research Inc   (United States)

Author keywords

Carbon nanotube field effect transistor (CNFET); CNFET circuit performance; Parasitic fringe capacitance

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; GATES (TRANSISTOR); MOSFET DEVICES; NANOTECHNOLOGY;

CARBON-NANOTUBE FIELD EFFECT TRANSISTOR; PARASITIC FRINGE CAPACITANCE;

SEMICONDUCTOR DEVICE TESTING;

EID: 33646239156     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873380     Document Type: Article

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