Effects of defects generated in ALD TiO2 films on electrical properties and interfacial reaction in TiO2/SiO2/Si system upon annealing in vacuum

Metals and Materials International

Volumn 14, Issue 6, 2008, Pages 759-765

  Won, Sanghee ^a   Go, Seunghee ^a   Lee, Wonhee ^a   Jeong, Kyunghoon ^a   Jung, Hyunsuk ^a   Lee, Chongmu ^b   Lee, Eungu ^c   Lee, Jaegab ^a  

^a Kookmin University   (South Korea)

^b Inha University   (South Korea)

^c Chosun University   (South Korea)

Author keywords

Generation of defects; Interface stability; Schottky contacts; TiO2; Transmission line model

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ATOMIC LAYER DEPOSITION; CRYSTAL ATOMIC STRUCTURE; ELECTRIC LINES; ELECTRODES; ELECTROMAGNETIC WAVE EMISSION; OXIDE MINERALS; SILICA; SILICON; SILICON OXIDES; THIN FILMS; TRANSMISSION LINE THEORY; TRANSMISSIONS;

ACCURATE MEASUREMENT; AMORPHOUS STRUCTURES; ANNEALING IN VACUUM; ANNEALING TEMPERATURES; INTERFACE STABILITIES; SCHOTTKY CONTACTS; TIO2; TRANSMISSION LINE MODELING;

TITANIUM DIOXIDE;

EID: 58149267593     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03027993     Document Type: Article

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