Influence of laser treatment on the electrical properties of plasma-enhanced-atomic-layer-deposited TiO2 thin films

Metals and Materials International

Volumn 11, Issue 4, 2005, Pages 285-289

  Kim, Jeon Ho ^a   Lee, Won Jae ^b   Kim, Jin Dong ^c   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

^b Dong Eui University   (South Korea)

^c Kim Semiconductor Materials Research Center DNF Co   (South Korea)

Author keywords

Leakage current density; PEALD; Permittivity; Tetrakis (dimethylamino) titanium; TiO2 films

Indexed keywords

ANNEALING; ATOM LASERS; ATOMIC LAYER DEPOSITION; CURRENT DENSITY; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; OXIDE MINERALS; PERMITTIVITY; TITANIUM DIOXIDE;

ATOMIC LAYER DEPOSITED; DEFECT CHEMISTRY; LASER TREATMENT; PEALD; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SI (100) SUBSTRATE; TETRAKIS; TIO2 FILM;

THIN FILMS;

EID: 28744451229     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03027330     Document Type: Article

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