Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p -type organic semiconductors

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Hiramatsu, Hidenori ^a   Koizumi, Ikue ^b   Kim, Ki Beom ^b   Yanagi, Hiroshi ^b   Kamiya, Toshio ^a,b   Hirano, Masahiro ^a,b   Matsunami, Noriaki ^c   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; COPPER OXIDES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; HOLE MOBILITY; HOLE TRAPS; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TIN; TITANIUM COMPOUNDS; TRANSISTORS;

ATOMICALLY FLAT SURFACES; COPPER DIFFUSIONS; COPPER PHTHALOCYANINES; COPPER SELENIDE; DOPING CONCENTRATIONS; DRUDE MODELS; EFFECTIVE MASSES; FREE CARRIERS; HIGH ELECTRICAL CONDUCTIVITIES; HOLE TRANSPORTS; INDIUM TIN OXIDES; INJECTION BARRIERS; INJECTION LAYERS; LIGHT EMITTING DIODE LEDS; LOW THRESHOLD VOLTAGES; LOW VOLTAGES; METALLIC CONDUCTIONS; OHMIC CHARACTERISTICS; ORGANIC DEVICES; ORGANIC SEMICONDUCTORS; PHOTOEMISSION SPECTROSCOPIES; ROOM TEMPERATURES;

HOLE CONCENTRATION;

EID: 58149251871     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3039167     Document Type: Article

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