Structural change during annealing of amorphous indium-tin oxide films deposited by sputtering with H2O addition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2788-2792

  Nishimura, Etsuko ^a   Ando, Masahiko ^a   Onisawa, Ken Ichi ^a   Takabatake, Masaru ^a   Minemura, Tetsuroh ^a  

^a HITACHI LTD   (Japan)

Author keywords

Amorphous; Crystallization; Indium tin oxide (ITO); Resistivity; Scanning electron microscopy (SEM); Sputtering; Thermal desorption spectroscopy (TDS); Thin film; Transparent electrode; X ray diffraction (XRD)

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; HALL EFFECT; HYDROGEN BONDS; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; STRUCTURE (COMPOSITION); THERMAL EFFECTS; WATER; X RAY DIFFRACTION;

AMORPHOUS INDIUM TIN OXIDE FILMS; ANNEALING EFFECTS; FILM RESISTIVITY; STRUCTURAL CHANGE; THERMAL DESORPTION SPECTROSCOPY; WATER ADDITION;

AMORPHOUS FILMS;

EID: 0030142949     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2788     Document Type: Article

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