Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor, LaCuOSe:Mg

Organic Electronics

Volumn 9, Issue 5, 2008, Pages 890-894

  Yanagi, Hiroshi ^a   Kikuchi, Maiko ^a   Kim, Ki Beom ^a   Hiramatsu, Hidenori ^b   Kamiya, Toshio ^a,b   Hirano, Masahiro ^a,b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Hole only device; LaCuOSe; NPB; OLED; Transparent anode; Transparent p type semiconductor

Indexed keywords

ANODES; CHARGE INJECTION; ELECTRON DEVICES; ELECTRON INJECTION; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOELECTRON SPECTROSCOPY; THRESHOLD VOLTAGE; TRANSPARENT ELECTRODES;

HOLE-ONLY DEVICE; LACUOSE; OLED; TRANSPARENT ANODES; TRANSPARENT P-TYPE SEMICONDUCTOR;

WIDE BAND GAP SEMICONDUCTORS;

AMINES; ANODES; CURRENT DENSITY; DIODES; ELECTRODES; GALLIUM COMPOUNDS; LANTHANUM COMPOUNDS; MAGNESIUM; NONMETALS; PRINTING PLATES; RESISTIVITY; SEMICONDUCTOR DEVICES; SEMICONDUCTORS; WORK FUNCTION;

EID: 49049106079     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.03.004     Document Type: Article

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