Electrical breakdown and nanogap formation of indium oxide core/shell heterostructure nanowires

Nanotechnology

Volumn 19, Issue 49, 2008, Pages

  Jung, Minkyung ^a   Song, Woon ^a   Sung Lee, Joon ^a   Kim, Nam ^a   Kim, Jinhee ^a   Park, Jeunghee ^b   Lee, Hyoyoung ^c   Hirakawa, Kazuhiko ^d  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Korea University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC BREAKDOWN OF LIQUIDS; FIELD EFFECT TRANSISTORS; INDIUM; MELTING POINT; NANOWIRES; TRANSISTORS;

BREAKDOWN BEHAVIORS; CORE/SHELL; DEVICE STRUCTURES; ELECTRICAL BREAKDOWNS; HETEROSTRUCTURE NANOWIRES; INDIUM OXIDES; MELTING TEMPERATURES; NANOGAP FORMATIONS; PENTACENE; SUSPENDED STRUCTURES; THERMAL TRANSPORTS; VOLTAGE CHARACTERISTICS;

ELECTRIC WIRE;

CRYSTALLIN; INDIUM; NANOPARTICLE; NANOWIRE;

ARTICLE; CHEMICAL STRUCTURE; CONTROLLED STUDY; DEVICE; ELECTRIC ACTIVITY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; MELTING POINT; MICROMORPHOLOGY; MOLECULAR SIZE; PRIORITY JOURNAL; SEMICONDUCTOR; STRUCTURE ANALYSIS; SYNTHESIS; TEMPERATURE;

EID: 58149242589     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/49/495702     Document Type: Article

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