Parallel nanogap fabrication with nanometer size control using III-V semiconductor epitaxial technology

Nanotechnology

Volumn 19, Issue 27, 2008, Pages

  Fernández Martínez, Iván ^a   González, Yolanda ^a   Briones, Fernando ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; ETCHING; HETEROJUNCTIONS; OPTICAL DESIGN; STANDARDS; WET ETCHING;

BEAM LENGTH; BREAK JUNCTIONS; E BEAM LITHOGRAPHY; ELECTRONIC DEVICES; EPITAXIAL HETEROSTRUCTURE; HETEROSTRUCTURES; II-IV SEMICONDUCTORS; NANO GAPS; NANOGAP FABRICATION; NANOMETER SIZES; SIZE CONTROL; WET-ETCHING PROCESSES;

MOLECULAR BEAM EPITAXY;

NANOGAP; NANOMATERIAL;

ARTICLE; ELECTRODE; FABRICATION; LEISURE; PARTICLE SIZE; PRIORITY JOURNAL; PROCESSING; REPRODUCIBILITY; SEMICONDUCTOR; STRESS;

EID: 48249146613     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/27/275302     Document Type: Article

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