Short-channel effect and single-electron transport in individual indium oxide nanowires

Nanotechnology

Volumn 18, Issue 43, 2007, Pages

  Jung, Minkyung ^a   Lee, Hyoyoung ^a   Moon, Sunkyung ^b   Song, Woon ^b   Kim, Nam ^b   Kim, Jinhee ^b   Jo, Gunho ^c   Lee, Takhee ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB DIAMONDS; GATE MODULATION CURVE; PARTICLE ENERGY LEVELS; SHORT CHANNEL EFFECTS; SPIN DEGENERACY;

COULOMB BLOCKADE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; NANOWIRES;

INDIUM COMPOUNDS;

INDIUM; INDIUM OXIDE; NANOWIRE; UNCLASSIFIED DRUG;

ANALYTIC METHOD; ARTICLE; CHANNEL GATING; ELECTRIC CURRENT; ELECTRON TRANSPORT; ENERGY; OSCILLATION; PERIODICITY; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR;

EID: 36049039919     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/43/435403     Document Type: Article

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