Electrical conduction mechanisms in natively doped ZnO nanowires

Nanotechnology

Volumn 20, Issue 1, 2009, Pages

  Chiu, Shao Pin ^a   Lin, Yong Han ^a   Lin, Juhn Jong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMS; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRON MOBILITY; LITHOGRAPHY; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; NANOWIRES; QUANTUM CHEMISTRY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SIGNAL TRANSDUCTION; SURFACE PHENOMENA; THERMAL EVAPORATION; TWO DIMENSIONAL; ZINC; ZINC OXIDE;

CHARGE TRANSPORT MECHANISMS; CONDUCTION PROCESSES; CRITICAL CONCENTRATIONS; ELECTRICAL CONDUCTION MECHANISMS; ELECTRICAL CONDUCTIONS; HIGH CONCENTRATIONS; HOPPING CONDUCTIONS; INTRINSIC RESISTIVITIES; MATERIAL PROPERTIES; TEMPERATURE BEHAVIORS; TRANSPORT MECHANISMS; TRANSPORT PHENOMENONS; ZNO NANOWIRES;

HEAT CONDUCTION;

GOLD; NANOCARRIER; NANOWIRE; TITANIUM; ZINC OXIDE;

ARTICLE; CONCENTRATION RESPONSE; ELECTRIC CONDUCTIVITY; ELECTRICITY; ELECTRON; ELECTRON BEAM; MOLECULAR PROBE; PRIORITY JOURNAL; QUANTUM CHEMISTRY; THERMAL CONDUCTIVITY;

EID: 58149236809     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/1/015203     Document Type: Article

References (50)

1. Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2003 Superlatt. Microstruct. 34 3
2. Ozgür Ü, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J and Morkoç H 2005 J. Appl. Phys. 98 041301
3. Klingshirn C 2007 Phys. Status Solidi b 244 3027
4. Look D C, Farlow G C, Reunchan P, Limpijumnong S, Zhang S B and Nordlund K 2005 Phys. Rev. Lett. 95 225502
5. Van de Walle C G 2000 Phys. Rev. Lett. 85 1012
6. Hofmann D M, Hofstaetter A, Leiter F, Zhou H, Henecker F, Meyer B K, Orlinskii S B, Schmidt J and Baranov P G 2002 Phys. Rev. Lett. 88 045504
7. Lany S and Zunger A 2007 Phys. Rev. Lett. 98 045501
8. Selim F A, Weber M H, Solodovnikov D and Lynn K G 2007 Phys. Rev. Lett. 99 085502
9. Heo Y W, Norton D P, Tien L C, Kwon Y, Kang B S, Ren F, Pearton S J and LaRoche J R 2004 Mater. Sci. Eng. R 47 1
10. Fan Z and Lu J G 2005 J. Nanosci. Nanotechnol. 5 1561
11. Heo Y W, Tien L C, Norton D P, Kang B S, Ren F, Gila B P and Pearton S J 2004 Appl. Phys. Lett. 85 2002
12. Ma Y J, Zhang Z, Zhou F, Lu L, Jin A and Gu C 2005 Nanotechnology 16 746
13. Lin X, He X B, Yang T Z, Guo W, Shi D X, Gao H J, Ma D D D, Lee S T, Liu F and Xie X C 2006 Appl. Phys. Lett. 89 043103
14. Schlenker E, Bakin A, Weimann T, Hinze P, Weber D H, Gölzhäuser A, Wehmann H H and Waag A 2008 Nanotechnology 19 365707
15. Fan Z, Wang D, Chang P C, Tseng W Y and Lu J G 2004 Appl. Phys. Lett. 85 5923
16. Goldberger J, Sirbuly D J, Law M and Yang P 2005 J. Phys. Chem. B 109 9
17. Chang P C, Chien C J, Stichtenoth D, Ronning C and Lu J G 2007 Appl. Phys. Lett. 90 113101
18. Song S, Hong W K, Kwon S S and Lee T 2008 Appl. Phys. Lett. 92 263109
19. Lin Y F, Jian W B, Wang C P, Suen Y W, Wu Z Y, Chen F R, Kai J J and Lin J J 2007 Appl. Phys. Lett. 90 223117
20. Lin Y H, Chiu S P and Lin J J 2008 Nanotechnology 19 365201
21. Mott N F and Twose W D 1961 Adv. Phys. 10 107
22. Wu Z Y, Chen I J, Lin Y F, Chiu S P, Chen F R, Kai J J, Lin J J and Jian W B 2008 New J. Phys. 10 033017
23. Nishimura H 1965 Phys. Rev. 138 A815
24. Shklovskii B I and Efros A L 1984 Electronic Properties of Doped Semiconductors (New York: Springer)
25. Hung C S and Gliessman J R 1954 Phys. Rev. 96 1226
26. Mott N F and Davis E A 1979 Electronic Processes in Non-Crystalline Materials (Oxford: Clarendon)
27. Norton P 1976 Phys. Rev. Lett. 37 164
28. Look D C, Coskun C, Claflin B and Farlow G C 2003 Physica B 340-342 32
29. Daunov M I, Arslanov R K, Gadjialiev M M, Kortunova E V, Khokhlachev P P and Shvansky P P 2006 Semiconductors 40 1255
30. Seager C H and Myers S M 2003 J. Appl. Phys. 94 2888
31. Fritzsche H 1955 Phys. Rev. 99 406
32. Sadasiv G 1962 Phys. Rev. 128 1131
33. Davis E A and Compton W D 1965 Phys. Rev. 140 A2183
34. Gu J, Kitahara T, Kawakami K and Sakaguchi T 1975 J. Appl. Phys. 46 1184
35. Sites J R and Nedoluha A K 1981 Phys. Rev. B 24 4309
36. Driessen F A J M, Bauhuis G J, Olsthoorn S M and Giling L J 1993 Phys. Rev. B 48 7889
37. Bauhuis G J, Driessen F A J M and Giling L J 1993 Phys. Rev. B 48 17239
38. Agrinskaya N V, Kozub V I, Polyanskaya T A and Saidov A S 1999 Semiconductors 33 135
39. Chang P C and Lu J G 2008 Appl. Phys. Lett. 92 212113
40. Mott N F and Davis E A 1968 Phil. Mag. 17 1269
41. Lin J J and Giordano N 1987 Phys. Rev. B 35 545
42. Lin J J and Bird J P 2002 J. Phys.: Condens. Matter 14 R501
43. Hikami S, Larkin A I and Nagaoka Y 1980 Prog. Theor. Phys. 63 707
44. Chiquito A J, Lanfredi A J C, de Oliveira R F M, Pozzi L P and Leite E R 2007 Nano Lett. 7 1439
45. Look D C, Claflin B and Smith H E 2008 Appl. Phys. Lett. 92 122108
46. Schmidt O, Kiesel P, Ehrentraut D, Fukuda T and Johnson N M 2007 Appl. Phys. A 88 71
47. Ellmer K 2001 J. Phys. D: Appl. Phys. 34 3097
48. Mott N F 1982 Proc. R. Soc. A 382 1
49. Hutson A R 1957 Phys. Rev. 108 222
50. Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Cantwell G and Harsch W C 1998 Solid State Commun. 105 399