The impact of ZnO nanoparticle inter layer on the growth and morphology of broom-like single crystalline gallium nitride

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 10, 2008, Pages 5351-5355

  Uthirakumar, Periyayya ^a   Suh, Eun Kyung ^a   Hong, Chang Hee ^a  

^a Chonbuk National University   (South Korea)

Author keywords

GaN Nanomaterials; Hexagonal GaN; Nitridation Process; Semiconducting lll V Materials; Silicon

Indexed keywords

COMPLEX MATERIALS; COMPLEX PRECURSORS; CONSTANT FLOWS; EFFECT OF ZINCS; GALLATE; GAN NANOMATERIALS; HEXAGONAL GAN; INTER-LAYERS; LAYER DEPOSITIONS; MICRON SIZES; MORPHOLOGICAL CHANGES; PROCESS TIMES; QUARTZ TUBES; SEM IMAGES; SEMICONDUCTING LLL-V MATERIALS; SI (100) SUBSTRATES; SI SUBSTRATES; SILICON SUBSTRATES; STRUCTURE AND MORPHOLOGIES; SURFACE COMPATIBILITIES; X-RAY DIFFRACTIONS; ZNO NANOPARTICLES;

CRYSTALLINE MATERIALS; ELECTRON TUBES; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GROWTH (MATERIALS); MORPHOLOGY; NANOPARTICLES; NANOSTRUCTURED MATERIALS; NITRIDES; OXIDE MINERALS; QUARTZ; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 58149235663     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.1292     Document Type: Conference Paper

References (23)

1. S. Nakamura, Science 281, 956 (1998).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, and T. Mukai, Appl. Phys. Lett. 76, 22 (2000).
3. M. Morales and C. M. Lieber, Science 279, 208 (1998).
4. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
5. W. Han, S. Fan, Q. Li, and Y. Hu, Science 277, 1287 (1997).
6. E. Feltin, B. Beaumont, M. Laugt, and Gibart, Appl. Phys. Lett. 79, 3230 (2001).
7. A. Strittmatter, S. Rodt, L. Reibmann, and Bimberg, Appl. Phys. Lett. 78, 727 (2001).
8. Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, and N. Sawaki, Jpn. J. Appl. Phys. 37, L966 (1998).
9. C. Mo, W. Fang, and F. Zhang, J. Cryst. Growth 285, 312 (2005).
10. S.-H. Jang, S.-J. Lee, I.-S. Seo, and C.-R. Lee, J. Cryst. Growth 241, 289 (2002).
11. A. Dadgar, R. Clos, and A. Krost, Adv. Solid State Phys. 44, 313 (2004).
12. C.-F. Shih, N.-C. Chen, C.-A. Chang, and K.-S. Liu, J. Appl. Phys. 44, L140 (2005).
13. J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 88, 171909 (2006).
14. P. Uthirakumar, H. Nam, S. H. Woo, E.-K. Suh, and C.-H. Hong, Curr. Appl. Phys., in press.
15. P. Uthirakumar, H. Nam, E.-K. Suh, and C.-H. Hong, JNN, submitted.
16. P. Uthirakumar, E.-K. Suh, and C.-H. Hong, Appl. Surf. Sci., submitted.
17. R. García, G. A. Hirata, M. H. Farías, and J. McKittrick, Mat. Sci. Engg. B 90, 7 (2002).
18. S. H. Eom, S. Senthilarasu, P. Uthirakumar, C.-H. Hong, Y.-S. Lee, J. Lim, S. C. Yoon, C. Lee, and S.-H. Lee, Sol. Energy Mat. Sol. Cells 92, 564 (2008).
19. H. Qiu, C. Cao, and H. Zhu, Mat. Sci. Engg. B 136, 33 (2007).
20. S. Q. Zhou, A. Vantomme, and B. S. Zhang, Appl. Phys. Lett. 86, 081912 (2005).
21. M. Xiaojun and Y Zhijian, Chinese Journal of Semiconductors 20, 639 (1999).
22. D. C. Raynolds, D. C. Look, B. Jogai, J. E. V. Nostrand, R. Jones, and J. Jenny, Sol. St. Comm. 106, 701 (1998).
23. S. Li, C. Mo, L. Wang, C. Xiong, X. Peng, F. Jiang, Z. Deng, and D. Gong, J. Lumin. 93, 321 (2001).